Title :
Statistical properties of single-electron pulse in semiconductor microchannel
Author :
Panyutin, Eugeny A.
Author_Institution :
Ioffe Phys. Tech. Inst., St. Petersburg, Russia
fDate :
June 30 2014-July 4 2014
Abstract :
Secondary-electron amplification of single-electron pulse in semiconductor microchannel is characterized by a number of statistical parameters, knowledge whereof is necessary for creating high-quality random signal generators. In this paper, variance and output electrons number distribution asymmetry were calculated using computer methods and the interdependence of the latter with the energy and angular distributions of secondary electrons parameters was determined.
Keywords :
secondary electron emission; semiconductor materials; signal generators; angular distributions; energy distributions; output electrons number distribution asymmetry; random signal generators; secondary electron amplification; semiconductor microchannel; single electron pulse; statistical parameters; statistical properties; Anodes; Computational modeling; Computers; Electronic mail; Generators; Microchannels; Signal generators;
Conference_Titel :
Vacuum Electron Sources Conference (IVESC), 2014 Tenth International
Conference_Location :
St. Petersburg
Print_ISBN :
978-1-4799-5770-5
DOI :
10.1109/IVESC.2014.6892054
