Process Model Verification for Dopant Segregation and Oxidation Enhanced Diffusion

This paper describes a case study of semiconductor process modeling verification which has been implemented in the silicon processing course within the Microelectronic Engineering Department at the Rochester Institute of Technology. The study focuses on fully-coupled modeling and fabrication of ion implanted profiles that are annealed in a steam ambient, causing oxidation enhanced diffusion. Silvaco\´s Athena process simulation software is used. Processing steps were carried out in RIT\´s Semiconductor & Microsystems Fabrication Laboratory. Significant improvement in simulation accuracy was obtained by creation of a new set of "default" model parameters.