Title :
Effect of growth conditions on carbon film properties
Author :
Podsvirov, O.A. ; Karaseov, P.A. ; Shubina, E.N. ; Mishin, M.V. ; Pozdniakov, A.V. ; Titov, A.I. ; Shakhmin, A.L. ; Vinogradov, A.Ya. ; Karasev, N.N.
Author_Institution :
St. Petersburg State Polytech. Univ., St. Petersburg, Russia
fDate :
June 30 2014-July 4 2014
Abstract :
Diamond-like carbon films were grown on silicon and insulating substrates by PECVD technique using methane as a precursor and 10-50% nitrogen or diborane additives. XPS analysis showed increase of sp3 and decrease of sp2 bonded carbon atoms with both additives fraction increase. Sheet resistance also decreased.
Keywords :
X-ray photoelectron spectra; additives; bonds (chemical); diamond-like carbon; electric resistance; plasma CVD; thin films; C; PECVD technique; Si; XPS analysis; additive fraction; bonded carbon atoms; diamond-like carbon films; diborane additive; growth condition effect; insulating substrate; methane; nitrogen additive; sheet resistance; silicon substrate; Additives; Carbon; Electronic mail; Impurities; Nitrogen; Resistance; Silicon;
Conference_Titel :
Vacuum Electron Sources Conference (IVESC), 2014 Tenth International
Conference_Location :
St. Petersburg
Print_ISBN :
978-1-4799-5770-5
DOI :
10.1109/IVESC.2014.6892057
