DocumentCode :
2274407
Title :
Silicon vertical-nano-wire based photovaltaic device
Author :
Wang, J. ; Li, Z.H. ; Singh, N. ; Lo, G.Q. ; Lee, S.J.
Author_Institution :
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
fYear :
2010
fDate :
27-29 Oct. 2010
Firstpage :
247
Lastpage :
249
Abstract :
High efficiency nanowire based solar cell is realized on single-crystalline Si substrate using standard CMOS processes. High short-circuit current of 22.5mA/cm2 and power conversion efficiency of ~7.5% is demonstrated with reflectivity of the nanowire surface as low as ~8%.
Keywords :
nanowires; photovoltaic cells; short-circuit currents; silicon; solar cells; CMOS processes; photovoltaic device; power conversion efficiency; short-circuit current; silicon vertical nanowire; solar cell; Arrays; Junctions; Optical surface waves; Photovoltaic cells; Reflectivity; Silicon; Substrates; Silicon vertical nanowire; solar cell;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IPEC, 2010 Conference Proceedings
Conference_Location :
Singapore
ISSN :
1947-1262
Print_ISBN :
978-1-4244-7399-1
Type :
conf
DOI :
10.1109/IPECON.2010.5697114
Filename :
5697114
Link To Document :
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