A novel plasma-based technique for conformal 3D FINFET doping

A novel plasma based conformal doping technique was developed in this work and process characterization was conducted for arsenic doping in terms of doping conformality, residual silicon fin damage, sheet resistance and effect of doping process parameters. Doping conformality, the ratio of doping at then fin sidewall and top, was characterized by cross-section transmission electron spectroscopy (XTEM) and through-fin secondary ion mass spectroscopy (SIMS) on fin structures. The residual post-anneal damage was also evaluated. Sheet resistance (Rs) was used for the matching to beam line implant. The effect of main doping process parameters on silicon fin amorphization was also studied.