Application of cluster Ion (carbon) implantation for strain applications

For 28nm and beyond technology nodes it is essential to enhance carrier mobility of the devices by introducing embedded Si:C structures using new materials or structures or new implant and anneal process schemes. In this article we review and verify available information using Si:C formation through implant and anneal approach with low temperature cluster carbon and cluster phosphorous implants. We show here the difference in process results for single and double carbon implants for various pre-anneal and laser annealing conditions. This article explores the effect of cluster carbon implants on various pre-anneal conditions and implant temperature effects on sheet resistance, carbon substitution and junction depths which are critical in determining important device characteristics.