Title :
Ultra-low standby-currents for deep sub-micron VLSI CMOS circuits: smart series switch
Author :
van der Meer, P.R. ; van Staveren, A. ; van Roermund, A.H.M.
Author_Institution :
Electron. Res. Lab., Delft Univ. of Technol., Netherlands
Abstract :
The Smart Series Switch (“Triple-S”) technique provides, for present and future deep-sub-micron technologies, in standby mode for 5 decades leakage-current reduction while retaining circuit states by using a two-transistor series switch with a smart combination of state and mode dependency and high and low thresholds
Keywords :
CMOS digital integrated circuits; VLSI; field effect transistor switches; flip-flops; leakage currents; low-power electronics; VLSI CMOS circuits; deep submicron CMOS circuits; high thresholds; leakage-current reduction; low thresholds; mode dependency; power reduction technique; smart series switch; standby mode; state dependency; two-transistor series switch; ultra-low standby-currents; CMOS technology; Equations; Information technology; Laboratories; Leakage current; Switches; Switching circuits; Threshold voltage; Time factors; Very large scale integration;
Conference_Titel :
Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on
Conference_Location :
Geneva
Print_ISBN :
0-7803-5482-6
DOI :
10.1109/ISCAS.2000.858673
