DocumentCode
2274772
Title
A new cad-model of a gate turn-off thyristor
Author
Kurata, Mamoru
Author_Institution
R&D Center, Toshiba, Kawasaki, Japan
fYear
1974
fDate
10-12 June 1974
Firstpage
125
Lastpage
133
Abstract
A new CAD-model of a GTO-thyristor has been developed, including non-linear junction recovery, lateral currents through the conductivity-modulated base layers and external circuit conditions. Computed results give a real time transient response of charges, currents and voltages. A comparison will be made between theoretical and experimental results of a test sample. Agreement is shown to be satisfactory for a quantitative estimation of the actual device characteristics. Further, turn-off time variation due to device parameter fluctuations will be predicted for wide p-base samples.
Keywords
CAD; semiconductor device models; thyristors; transient response; GTO-thyristor; conductivity-modulated base layers; device parameter fluctuations; external circuit conditions; gate turn-off thyristor; lateral currents; new CAD-model; nonlinear junction recovery; real time transient response; turn-off time variation; wide p-base samples; Abstracts; Cathodes; Lead; Logic gates;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1974 IEEE
Conference_Location
Murray Hill, NJ
ISSN
0275-9306
Type
conf
DOI
10.1109/PESC.1974.7074338
Filename
7074338
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