Title :
System LSI Embedded Ferroelectric Memory Technology
Author :
Nagano, Yoshihisa ; Fujii, Eiji
Author_Institution :
Matsushita Electr. Ind. Co., Ltd., Kyoto
Abstract :
System LSI embedded ferroelectric memory (FeRAM) operating at a very low voltage has been developed. The key technology of the low-voltage operation is the newly developed stacked ferroelectric capacitors completely encapsulated by hydrogen barriers, which enable us to eliminate hydrogen reduction of the ferroelectric thin film during the integration process. This technology is applied for not only the planer stachked ferroelectric capacitors but also the three-dimensional (3-D) capacitors, which is the most promising for mass production of 0.18-mum low-power system LSI-embedded FeRAM and beyond.
Keywords :
ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; large scale integration; thin film capacitors; LSI embedded ferroelectric memory; ferroelectric capacitors; ferroelectric thin film; hydrogen barriers; low-voltage operation; three-dimensional capacitors; Capacitors; Ferroelectric films; Ferroelectric materials; Hydrogen; Large scale integration; Low voltage; Metalworking machines; Nonvolatile memory; Random access memory; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2007.4393152
