DocumentCode
2274807
Title
Analysis of a power semiconductor near its threshold of destruction
Author
Jaecklin, A.A. ; Lietz, M.
Author_Institution
Boveri Ltd., Baden, Switzerland
fYear
1974
fDate
10-12 June 1974
Firstpage
134
Lastpage
139
Abstract
The limits of stable operation are investigated for various current densities. A model of the destruction mechanism for high current densities is proposed considering heat flow and the appearance of an axially localized temperature peak.
Keywords
current density; power semiconductor devices; semiconductor device models; axially localized temperature peak; current densities; destruction mechanism; destruction threshold; power semiconductor; Current density; Heating; Nonhomogeneous media; Plasma temperature; Temperature; Temperature measurement; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1974 IEEE
Conference_Location
Murray Hill, NJ
ISSN
0275-9306
Type
conf
DOI
10.1109/PESC.1974.7074339
Filename
7074339
Link To Document