Title :
Key process technology for high density 64M FeRAM and beyond
Author :
Yamakawa, K. ; Ozaki, T. ; Kanaya, H. ; Kunishima, I. ; Kumura, Y. ; Shimojo, Y. ; Shuto, S. ; Hidaka, O. ; Yamada, Y. ; Yamazaki, S. ; Shiratake, S. ; Takashima, D. ; Miyakawa, T. ; Ohtsuki, S. ; Hamamoto, T.
Author_Institution :
Toshiba Corp. Semicond. Co., Yokohama
Abstract :
Difficulty to achieve high density FeRAMs with sub-micron ferroelectric capacitors is widely understood due to damage to the capacitors. Key process techniques such as high quality ferroelectric film deposition, electrode preparation, capacitor RIE and hydrogen barrier structure formation are introduced for 64M FeRAMs with sub micron high reliability PZT capacitors.
Keywords :
ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; lead compounds; random-access storage; thin film capacitors; PZT; ferroelectric capacitors; ferroelectric film; high density FeRAM; hydrogen barrier structure; Capacitors; Electrodes; Ferroelectric films; Ferroelectric materials; Hydrogen; MOCVD; Nonvolatile memory; Random access memory; Robustness; Voltage;
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2007.4393153
