Ferroelectric Random Access Memory Using Pb(Zr,Ti,Nb)O3 Films

Author

Kijima, Takeshi ; Aoyama, Taku ; Miyazawa, Hiromu ; Hamada, Yasuaki ; Ohashi, Koji ; Nakayama, Makoto ; Furuya, Masao Nakayama Noboru ; Matsumoto, Akihito ; Natori, Eiji ; Tanaka, Kazuo ; Shimoda, Tatsuya

Author_Institution

SEIKO EPSON CORP., Nagano

fYear

2007

fDate

27-31 May 2007

Firstpage

23

Lastpage

24

Abstract

We have succeeded in fabricating Pb(Zr,Ti,Nb)O₃ (PZTN) thin films with 20-atomic% Nb at B site in ABO₃ structure, which was suitable for high density and reliable ferroelectric random access memory (FeRAM). A sol-gel spin-coating method was used to prepare the PZTN thin films. 1 mol% Si co-doping was applied to promote the solid-solution of Nb atom into the original Pb(Zr,Ti)O₃ films. We suggested that in our PZTN the oxygen vacancies were well suppressed due to Nb substitution comparing with conventional Pb(Zr,Ti)O₃ (PZT). We also succeeded in obtaining excellent electric properties in 1times1 mum² capacitors with PZTN. In addition, we confirmed the no data degradation and the high reliability of our PZTN material has been demonstrated by 64 k-bits FeRAM chip operation.

Keywords

ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; lead compounds; random-access storage; sol-gel processing; spin coating; FeRAM chip; Pb(ZrTiNb)O₃:Si; capacitors; co-doping; ferroelectric random access memory; oxygen vacancies; sol-gel spin-coating method; thin films; Capacitors; Degradation; Ferroelectric films; Ferroelectric materials; Niobium; Nonvolatile memory; Random access memory; Semiconductor films; Semiconductor thin films; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on

Conference_Location

Nara

ISSN

1099-4734

Print_ISBN

978-1-4244-1334-8

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2007.4393155

Filename

4393155