Title :
Simulations of the terahertz AlGaN/GaN resonant tunneling diode
Author :
He, Hanbing ; Mao, Wei ; Yang, Lin´an
Author_Institution :
Sch. of Microelectron., Xidian Univ., Xi´´an, China
Abstract :
A simulation for terahertz aluminum gallium nitride (AlGaN)/gallium nitride (GaN) resonant tunneling diode (RTD) at room temperature is reported, by introducing deep-level defects into the polarized AlGaN/GaN/AlGaN quantum well. Results show that an obvious degradation in negative differential resistance(NDR) characteristic of RTD occurs when the defect density is above 106 cm-2. Finally, a RTD oscillator is simulated, which output power of 22.59 mW at 500GHz with the DC-to-RF conversion of 8.37%.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; resonant tunnelling diodes; semiconductor device models; submillimetre wave diodes; terahertz wave devices; wide band gap semiconductors; AlGaN-GaN-AlGaN; deep level defects; frequency 500 GHz; negative differential resistance; polarized quantum well; power 22.59 W; temperature 293 K to 298 K; terahertz resonant tunneling diode; Abstracts; Aluminum gallium nitride; Gallium nitride; Reliability;
Conference_Titel :
Junction Technology (IWJT), 2012 12th International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-1258-5
Electronic_ISBN :
978-1-4673-1256-1
DOI :
10.1109/IWJT.2012.6212824
