Title :
Multi-dimensional current flow in silicon power transistors operating in the saturation mode
Author_Institution :
RCA Labs., Princeton, NJ, USA
Abstract :
The current distribution in silicon power transistors operating in the saturation region has been determined by imaging the near-infrared recombination emitted by the transistor. It was found that the overlap diode model for the transistor provides a far better description of the current distribution than the more commonly-used one-dimensional Ebers-Moll model.
Keywords :
current distribution; power transistors; semiconductor device models; current distribution; multidimensional current flow; near-infrared recombination; one-dimensional Ebers-Moll model; overlap diode model; saturation region; silicon power transistors; Abstracts; Integrated circuits; Integrated optics; Optical saturation; Probes; Stimulated emission; Transistors;
Conference_Titel :
Power Electronics Specialists Conference, 1974 IEEE
Conference_Location :
Murray Hill, NJ
DOI :
10.1109/PESC.1974.7074342
