Title :
The effects of block oxide length (Lbo) and height (Hbo) in a bMOS
Author :
Kuan Kuan-Yu Chen ; Yu Chen ; Jyi-Tsong Lin ; Yi-Chuen Eng ; Shih-Wen Hsu ; Shu-Huan Syu ; You-Ren Lu
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Abstract :
In this paper, we investigate the important device characteristics of block oxide (BO) MOSFETs (bMOS), which are the BO length (Lbo) and the height (Hbo). According to the simulation results, the variation of Lbo and Hbo strongly affects the device characteristics, such as the sub-threshold swing, threshold voltage, on-state drain current (Ion), and the off-state drain current (Ioff). This is because the variation of Lbo and Hbo changes both the areas of BO and source/drain (S/D) regions, resulting in a variation of increase or decrease in the p-n junction area between the S/D regions and silicon substrate.
Keywords :
MOSFET; elemental semiconductors; semiconductor device manufacture; semiconductor device models; silicon; Si; bMOS; block oxide MOSFET; block oxide height effect; block oxide length effect; off-state drain current; on-state drain current; sub-threshold swing; threshold voltage; Abstracts; Logic gates; MOSFET circuits; Performance evaluation; Radio frequency; Substrates; Transistors;
Conference_Titel :
Junction Technology (IWJT), 2012 12th International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-1258-5
Electronic_ISBN :
978-1-4673-1256-1
DOI :
10.1109/IWJT.2012.6212828
