Title :
Misted Deposition of [3D] Trenches for Drams and Frams III. PZT Thin Films and PZT Nanotubes
Author :
Miyake, M. ; Scott, J.F. ; Lou, D.J. ; Morrison, F.D. ; Motoyama, S. ; Tatsuta, T. ; Tsuji, O.
Author_Institution :
Univ. of Cambridge Cambridge CB2 3EQ, Cambridge
Abstract :
Pb(Zr,Ti)O3 (PZT) thin films and nanotube were prepared on SiO2/Si substrates by liquid source misted chemical deposition (LSMCD) using Samco MD-6060 apparatus. We report the deposition and characterization of transparent ferroelectric thin films and nanotubes. PZT thin films deposited at ambient conditions and annealing at 700degC exhibit good ferroelectric properties with remanent polarisation of ca. 15 muC/cm2. The step coverage was 59% on the side wall and 79% on the bottom wall.
Keywords :
DRAM chips; annealing; dielectric polarisation; ferroelectric storage; ferroelectric thin films; lead compounds; liquid phase deposition; nanotubes; transparency; 3D trenches; DRAM; FRAM; PZT; PZT thin films; SiO2-Si; SiO2-Si substrates; annealing; liquid source misted chemical deposition; nanotubes; remanent polarisation; temperature 700 degC; transparent ferroelectric thin films; Annealing; Chemicals; Ferroelectric films; Ferroelectric materials; Nanotubes; Nonvolatile memory; Random access memory; Semiconductor thin films; Sputtering; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2007.4393160
