• DocumentCode
    2275016
  • Title

    High voltage power Schottky diodes

  • Author

    Cordes, L.F. ; Garfinkel, M.

  • Author_Institution
    Corp. R&D, Gen. Electr., Schenectady, NY, USA
  • fYear
    1974
  • fDate
    10-12 June 1974
  • Firstpage
    205
  • Lastpage
    213
  • Abstract
    Calculations of the low frequency rectification efficiency of power Schottky diodes show that silicon Schottky rectifiers have lower losses than silicon p-n junctions for all voltage applications up to approximately 150 volts. These calculations are presented. Large area (.6 cm2) Schottky diodes have been fabricated which exhibit near ideal reverse leakage at 100°C out to approximately 100 volts and which have current capability of 100 A. Fabrication details and performance data are presented.
  • Keywords
    Schottky diodes; elemental semiconductors; p-n junctions; power semiconductor diodes; rectifiers; semiconductor device manufacture; silicon; Si; current 100 A; low frequency rectification efficiency; power Schottky diodes; silicon Schottky rectifiers; silicon p-n junctions; temperature 100 C; Bridge circuits; P-n junctions; Rectifiers; Schottky barriers; Schottky diodes; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 1974 IEEE
  • Conference_Location
    Murray Hill, NJ
  • ISSN
    0275-9306
  • Type

    conf

  • DOI
    10.1109/PESC.1974.7074349
  • Filename
    7074349
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2275016