Title :
Set Power Dependency on the Resistive Switching in Cr-doped SrZrO3 Thin Films for Nonvolatile Memory Devices
Author :
Park, Jae-Wan ; Jung, Kyooho ; Yang, Min Kyu ; Park, Jong-Wan ; Lee, Jeon-Kook
Author_Institution :
Korea Inst. of Sci. & Technol., Seoul
Abstract :
Pt/Cr-doped SrZrO3/SrRuO3 metal-oxide-metal (MOM) structures were fabricated by off-axis rf sputtering for nonvolatile memory applications. The MOM structures showed reproducible and bistable resistive switching behaviors. From the low-temperature I-V measurements, it was found that the low-resistance state (LRS) was governed by ohmic conduction. In addition, the characteristics of LRS were influenced by switching parameters. With increasing set power and sweep delay time, the LRS current was decreased. These results suggested that the resistive switching mechanism is related to the formation of local conducting path in SrZrO3 matrix.
Keywords :
MIM structures; chromium; electrical resistivity; ferroelectric switching; ferroelectric thin films; platinum; strontium compounds; Pt-SrZrO3:Cr-SrRuO3; bistable resistive switching; local conducting path; low-resistance state; metal-oxide-metal structures; nonvolatile memory devices; off-axis rf sputtering; ohmic conduction; sweep delay time; thin films; Argon; Delay effects; Materials science and technology; Message-oriented middleware; Nonvolatile memory; Sputtering; Substrates; Temperature distribution; Thin film devices; Voltage;
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2007.4393163
