Complementary power FETS with vertical structures

Complentary power FETs having triode-like characteristics were found to have larger power capability than bipolar transistors and to be very suitable for high power applications. It is described that applying these devices to an audio amplifier a number of merits in characteristics and reliabilities can be obtained. The design theory is developed for these devices. Especially, the amplification factor is derived theoretically using the improved model for the vertical structure and the results shows qualitatively a good agreement with the data obtained from actual devices. The transition of characteristics from pentode-like to triode-like was verified experimentally taking the ratio of channel length to channel thickness as a parameter. The fabrication techniques are described briefly.