• DocumentCode
    2275053
  • Title

    Applications of site-specific scanning spreading resistance microscopy (SSRM) to failure analysis of production lines

  • Author

    Hayase, Y. ; Hara, Kentaro ; Ogata, Syuuji ; Li Zhang ; Akutsu, H. ; Kurihara, Masazumi ; Norimatsu, K. ; Nagamine, S.

  • Author_Institution
    Quality Assurance Dept., Oita Oper., Semicond. Co., Oita, Japan
  • fYear
    2012
  • fDate
    14-15 May 2012
  • Firstpage
    146
  • Lastpage
    149
  • Abstract
    Much attention has been paid to the site-specific scanning spreading resistance microscopy (SSRM) for visualizing impurity-diffusion layers because of its capability of failure analysis as well as analyzing scaled LSI devices. We report applications of the site-specific SSRM to failure analysis in LSI production lines for the first time. SSRM is shown to be capable of observing no implantation areas with high spatial resolution by combining with defect localization techniques. The combination of the site-specific SSRM with multiple failure analysis techniques in addition to design and process information has been demonstrated to be a powerful tool to find root causes in a short period.
  • Keywords
    failure analysis; large scale integration; microscopy; semiconductor industry; failure analysis; impurity-diffusion layers; production lines; scaled LSI devices; site-specific scanning spreading resistance microscopy; Abstracts; Companies; Electrodes; Metals; Nanoscale devices; Diffusion-layer visualization; LSI; PN junction; SCM; SSRM; carrier; dopant; failure analysis; impurity analysis; site-specific;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology (IWJT), 2012 12th International Workshop on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4673-1258-5
  • Electronic_ISBN
    978-1-4673-1256-1
  • Type

    conf

  • DOI
    10.1109/IWJT.2012.6212830
  • Filename
    6212830