DocumentCode
2275053
Title
Applications of site-specific scanning spreading resistance microscopy (SSRM) to failure analysis of production lines
Author
Hayase, Y. ; Hara, Kentaro ; Ogata, Syuuji ; Li Zhang ; Akutsu, H. ; Kurihara, Masazumi ; Norimatsu, K. ; Nagamine, S.
Author_Institution
Quality Assurance Dept., Oita Oper., Semicond. Co., Oita, Japan
fYear
2012
fDate
14-15 May 2012
Firstpage
146
Lastpage
149
Abstract
Much attention has been paid to the site-specific scanning spreading resistance microscopy (SSRM) for visualizing impurity-diffusion layers because of its capability of failure analysis as well as analyzing scaled LSI devices. We report applications of the site-specific SSRM to failure analysis in LSI production lines for the first time. SSRM is shown to be capable of observing no implantation areas with high spatial resolution by combining with defect localization techniques. The combination of the site-specific SSRM with multiple failure analysis techniques in addition to design and process information has been demonstrated to be a powerful tool to find root causes in a short period.
Keywords
failure analysis; large scale integration; microscopy; semiconductor industry; failure analysis; impurity-diffusion layers; production lines; scaled LSI devices; site-specific scanning spreading resistance microscopy; Abstracts; Companies; Electrodes; Metals; Nanoscale devices; Diffusion-layer visualization; LSI; PN junction; SCM; SSRM; carrier; dopant; failure analysis; impurity analysis; site-specific;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology (IWJT), 2012 12th International Workshop on
Conference_Location
Shanghai
Print_ISBN
978-1-4673-1258-5
Electronic_ISBN
978-1-4673-1256-1
Type
conf
DOI
10.1109/IWJT.2012.6212830
Filename
6212830
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