Title :
Piezoelectric gate for a two-dimensional electron system transport in LiNbO3-GaAs/AlGaAs sandwich structures
Author :
Korotchenkov, O.A. ; Polovina, O.I. ; Kurylyuk, V.V.
Abstract :
Standing-wave piezoelectric fields in the LiNbO3 driving plate are used to form depleted and accumulated electron densities in GaAs/AlGaAs quantum wells (QWs). The photoluminescence (PL) spectrum of the two-dimensional electron system (2DES) varies both spatially and temporally, exhibiting an electron-hole plasma recombination and exciton and trion emissions at large and small electron densities, respectively. Controlling the piezoelectric field component perpendicular to the quantum well layers offers a versatile tool to achieve the spatially indirect exciton luminescence in double QW structures.
Keywords :
III-V semiconductors; aluminium compounds; electron density; electron-hole recombination; gallium arsenide; lithium compounds; photoluminescence; piezoelectric thin films; sandwich structures; semiconductor quantum wells; trions; 2D electron system transport; LiNbO3-GaAs-AlGaAs; double quantum well structure; electron density; electron-hole plasma recombination; exciton emissions; photoluminescence; piezoelectric gate; sandwich structure; semiconductor quantum wells; spatially indirect exciton luminescence; standing-wave piezoelectric fields; trion emissions; Electric potential; Electron emission; Excitons; Gallium arsenide; Photoluminescence; Physics; Plasma density; Sandwich structures; Tensile stress; Two dimensional displays;
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2007.4393166
