A methodology for MOS transistor mismatch parameter extraction and mismatch simulation

This paper presents a methodology for mismatch parameter extraction and mismatch simulation using conventional electrical simulators, like HSpice. A measurement and extraction procedure has been carefully designed to be able to obtain reliable measurements of the mismatch parameters of a given technology. The correctness of this extraction procedure method has been checked through three different validation methods. We also present two methods for performing mismatch simulation with conventional circuit simulators (like HSpice) using the extracted parameters