DocumentCode
2275296
Title
Epitaxial growth and properties of NiSiGe
Author
Zhang, Bo ; Yu, Wenjie ; Zhao, Qingtai ; Mussler, Gregor ; Buca, Dan ; Holländer, Bernhard ; Mantl, Siegfried ; Zhang, Miao
Author_Institution
State Key Lab. of Functional Mater. for Inf., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
fYear
2012
fDate
14-15 May 2012
Firstpage
203
Lastpage
205
Abstract
Epitaxial growth of Ni germanosilicide on relaxed SiGe (30% Ge content) substrate has been achieved by using 3 nm Al interlayer. This epitaxial layer shows a very good uniformity and smooth interface and surface. The epitaxial layer and the SiGe substrate match very well and no misfit dislocation is found at the interface.
Keywords
Ge-Si alloys; chemical vapour deposition; epitaxial growth; nickel compounds; semiconductor epitaxial layers; semiconductor materials; silicon compounds; Al interlayer; Ni germanosilicide; NiSiGe; SiGe; SiGe substrate; chemical vapor deposition; epitaxial growth; epitaxial layer; size 3 nm; smooth interface; Abstracts; Annealing; Epitaxial growth; Germanium silicon alloys; Nickel; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology (IWJT), 2012 12th International Workshop on
Conference_Location
Shanghai
Print_ISBN
978-1-4673-1258-5
Electronic_ISBN
978-1-4673-1256-1
Type
conf
DOI
10.1109/IWJT.2012.6212841
Filename
6212841
Link To Document