Preparation of Barium Titanate Thin Films Made by MOCVD Using Ultrasonic Nebulization

Author

Kim, Kwang-Pyo ; Lee, Choon-Ho

Author_Institution

Keimyung Univ., Daegu

fYear

2007

fDate

27-31 May 2007

Firstpage

94

Lastpage

95

Abstract

Barium multi-titanate thin films were deposited by the MOCVD method. The films on Si and Pt/Ti/SiO2/Si substrates and the crystallographic properties of the prepared films were investigated by XRD and FE-SEM was used to study the surface morphology and cross-sectional image of the films. And to investigate the dielectric properties of films, capacitance-voltage characteristics were measured by Agilent 4294A Impedance analyze. We studied the effects of deposition parameters and RTA on the properties of the films.

Keywords

MOCVD; X-ray diffraction; barium compounds; dielectric properties; dielectric thin films; field emission electron microscopy; platinum; scanning electron microscopy; silicon; silicon compounds; surface morphology; titanium; BaTiO₃; FE-SEM; MOCVD method; Pt-Ti-SiO₂-Si; Si; XRD; agilent 4294A impedance analyze; capacitance-voltage characteristics; cross-sectional image; crystallographic properties; deposition parameters; dielectric properties; dielectric thin films; surface morphology; ultrasonic nebulization; Barium; Crystallography; Dielectric substrates; MOCVD; Semiconductor films; Sputtering; Surface morphology; Titanium compounds; Transistors; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on

Conference_Location

Nara

ISSN

1099-4734

Print_ISBN

978-1-4244-1334-8

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2007.4393177

Filename

4393177