DocumentCode :
2275515
Title :
Physical and electrical characteristics of SBT ferroelectric thin films with different thickness and varied stresses during annealing
Author :
Hsu, F.Y. ; Leu, C.C. ; Hu, C.T.
Author_Institution :
Nat. Tsing Hua Univ., Hsinchu
fYear :
2007
fDate :
27-31 May 2007
Firstpage :
112
Lastpage :
114
Abstract :
In present study, we applied either a tensile or compressive mechanical stress during annealing on SrBi2Ta2O9 (SBT) ferroelectric thin films with different thickness to investigate the effects of both thickness and stress on the physical and electric properties. The application of external stress during annealing led to the variety of both microstructures and constituted phases (ratio of perovskite vs, pyrochlore) in the films. These variations of structures became more significant in the relatively thinner films. Since the electrical properties of ferroelectrics were strongly depended on their microstructure, domain structure, and constituted phases, our ferroelectric samples demonstrated the distinct ferroelectric behaviors with the condition of various stressing and thickness.
Keywords :
annealing; bismuth compounds; crystal microstructure; electric domains; ferroelectric materials; ferroelectric thin films; strontium compounds; SBT ferroelectric thin films; SrBi2Ta2O9; annealing; compressive mechanical stress; domain structure; electrical properties; microstructures; perovskite-pyrochlore ratio; physical properties; Annealing; Compressive stress; Electric variables; Ferroelectric films; Ferroelectric materials; Microstructure; Residual stresses; Temperature; Tensile stress; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
ISSN :
1099-4734
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
Type :
conf
DOI :
10.1109/ISAF.2007.4393185
Filename :
4393185
Link To Document :
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