DocumentCode :
2275545
Title :
Properties of MOD-derived SrBi2Ta2O9 thin films crystallized in an electric field
Author :
Leu, Ching-Chich ; Wu, Tzong-Dar ; Hsu, Fan-Yi
Author_Institution :
Nat. Univ. of Kaohsiung, Kaohsiung
fYear :
2007
fDate :
27-31 May 2007
Firstpage :
115
Lastpage :
116
Abstract :
SrBi2Ta2O9 (SBT) films with thickness of about 200 nm were prepared on Pt/Ta/SiO2/Si substrates by metal-organic decomposition (MOD) method. A high electric field (250 kV/cm) was applied to SBT film during 750degC furnace annealing in atmosphere for 40 min. This applied electric field does some impacts on the microstructures and electrical properties of SBT regardless of the states of electric field. Under an electric field, the films exhibited stronger a/b-axis preferential orientation in Bismuth-layered structure (BLS) phase and a little higher ratio of second phase. In addition, parts of the granular grains grew into rod-like grains. As a result, the electrical properties of SBT thin films were improved by the application of electric field.
Keywords :
annealing; bismuth compounds; crystal microstructure; crystal orientation; crystallisation; decomposition; ferroelectric materials; ferroelectric thin films; platinum; silicon; silicon compounds; strontium compounds; tantalum; BLS; MOD orientation; PtTaSiO2Si; SBT film; SrBi2Ta2O9; annealing; bismuth-layered structure; ferroelectric films; granular grains; metal-organic decomposition; microstructures; size 200 nm; substrates; temperature 750 C; thin films crystallization; thin films electrical properties; Annealing; Atmosphere; Crystallization; Electrons; Ferroelectric films; Ferroelectric materials; Furnaces; Microstructure; Substrates; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
ISSN :
1099-4734
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
Type :
conf
DOI :
10.1109/ISAF.2007.4393186
Filename :
4393186
Link To Document :
بازگشت