Properties of MOD-derived SrBi2Ta2O9 thin films crystallized in an electric field

Author

Leu, Ching-Chich ; Wu, Tzong-Dar ; Hsu, Fan-Yi

Author_Institution

Nat. Univ. of Kaohsiung, Kaohsiung

fYear

2007

fDate

27-31 May 2007

Firstpage

115

Lastpage

116

Abstract

SrBi₂Ta₂O₉ (SBT) films with thickness of about 200 nm were prepared on Pt/Ta/SiO₂/Si substrates by metal-organic decomposition (MOD) method. A high electric field (250 kV/cm) was applied to SBT film during 750degC furnace annealing in atmosphere for 40 min. This applied electric field does some impacts on the microstructures and electrical properties of SBT regardless of the states of electric field. Under an electric field, the films exhibited stronger a/b-axis preferential orientation in Bismuth-layered structure (BLS) phase and a little higher ratio of second phase. In addition, parts of the granular grains grew into rod-like grains. As a result, the electrical properties of SBT thin films were improved by the application of electric field.

Keywords

annealing; bismuth compounds; crystal microstructure; crystal orientation; crystallisation; decomposition; ferroelectric materials; ferroelectric thin films; platinum; silicon; silicon compounds; strontium compounds; tantalum; BLS; MOD orientation; PtTaSiO₂Si; SBT film; SrBi₂Ta₂O₉; annealing; bismuth-layered structure; ferroelectric films; granular grains; metal-organic decomposition; microstructures; size 200 nm; substrates; temperature 750 C; thin films crystallization; thin films electrical properties; Annealing; Atmosphere; Crystallization; Electrons; Ferroelectric films; Ferroelectric materials; Furnaces; Microstructure; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on

Conference_Location

Nara

ISSN

1099-4734

Print_ISBN

978-1-4244-1334-8

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2007.4393186

Filename

4393186