Title :
Short-channel characteristics of self-aligned dual-channel source/drain-tied MOSFETs
Author :
Lu, You-Ren ; Lin, Jyi-Tsong ; Eng, Yi-Chuen ; Hsu, Shih-Wen ; Syu, Shu-Huan ; Chen, Kuan-Yu
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Abstract :
In this paper, we present a simulation study of short-channel characteristics of self-aligned dual-channel source/drain-tied (SA-DCSDT) MOSFETs. Two compared devices are designed, namely, the normal SA-DCSDT MOSFET and the ultimate SA-DCSDT MOSFET. According to simulation results, the DC is used to obtain a high drain saturation current, the SDT is used to get improved thermal stability, and the BOX under S/D regions is used to reduce the drain off-state current. A physical explanation for these results is also presented.
Keywords :
MOSFET; semiconductor device models; thermal stability; high drain saturation current; normal SA-DCSDT MOSFET; self-aligned dual-channel source/drain-tied MOSFET; short-channel characteristics; thermal stability; ultimate SA-DCSDT MOSFET; Abstracts; Hot carriers; Logic gates; MOSFETs; Silicon compounds; Substrates;
Conference_Titel :
Junction Technology (IWJT), 2012 12th International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-1258-5
Electronic_ISBN :
978-1-4673-1256-1
DOI :
10.1109/IWJT.2012.6212850
