Thermo-mechanical reliability analysis of 3D stacked-die packaging with through silicon via

Thermo-mechanical reliability for 3D stacked-die package with through silicon via (TSV) is studied through finite element simulation with sub-modeling technology, and design of experiments (DoE) using Taguchi experiments and analysis method. Firstly, the thermo-mechanical responses of micro-solder joints between stacked-die and copper via/SiO₂ insulated layer structures are investigated under accelerated thermal cycling test condition. The critical positions are identified by the simulation result checking and comparison. Then, a Taguchi experiment of L₁₈(2¹×3⁷) orthogonal array is designed to exam the effects of different configuration parameters including number of stacked-die, diameters of TSV, thickness of stacked-die and silicon interposer, standoff of the micro-solder joint and normal solder joint, and stiffness of the underfill on the durability of the solder joint interconnection and TSV structure. The importance of each of these control factors is compared and ranked. This study will help to obtain optimal and robust design of 3D stacked-die package for avoiding short fatigue life of interconnects and enhancement of thermo-mechanical reliability.