• DocumentCode
    2275568
  • Title

    Hole mobility enhancement of quantum-well p-MOSFETs on sSi/sSi0.5Ge0.5/sSOI heterostructure

  • Author

    Yu, W. ; Zhang, B. ; Zhao, Q.T. ; Buca, D. ; Wang, X. ; Mantl, S.

  • Author_Institution
    State Key Lab. of Functional Mater. for Inf., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
  • fYear
    2012
  • fDate
    14-15 May 2012
  • Firstpage
    246
  • Lastpage
    247
  • Abstract
    Strained silicon germanium (sSiGe), as channel materials, has received a lot of attention due to its high hole mobility [1]-[4]. sSi/sSiGe/sSOI heterostructure substrate [5]-[8] takes the advantages of the tensile strained Si layer, and thus can increase the critical thickness for pseudomorphically grown SiGe with high Ge concentration. In this work, QW p-MOSFETs [9]-[11] on sSi/sSi0.5Ge0.5/sSOI substrate were characterized and hole mobility was extracted, compared with QW p-MOSFETs on Si/sSi0.5Ge0.5/SOI substrate.
  • Keywords
    Ge-Si alloys; MOSFET; hole mobility; quantum well devices; silicon-on-insulator; Si-SiGe; critical thickness; heterostructure substrate; hole mobility enhancement; quantum-well p-MOSFET; strained silicon germanium; Abstracts; Capacitance; Logic gates; MOSFET circuits; Silicon; Substrates; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology (IWJT), 2012 12th International Workshop on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4673-1258-5
  • Electronic_ISBN
    978-1-4673-1256-1
  • Type

    conf

  • DOI
    10.1109/IWJT.2012.6212851
  • Filename
    6212851
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2275568