DocumentCode :
2275587
Title :
Hall resistance plateaus in high quality graphene samples at large currents: Toward quantization tests
Author :
Bennaceur, K. ; Guignard, J. ; Schopfer, F. ; Poirier, W. ; Glattli, D.C.
Author_Institution :
Service de Phys. de l´´Etat Condense, CEA Saclay, Gif-sur-Yvette
fYear :
2008
fDate :
8-13 June 2008
Firstpage :
14
Lastpage :
15
Abstract :
Graphene Hall bars prepared from exfoliated natural graphite of large size and high quality have been measured in the quantum Hall effect regime. The monolayer Graphene sheet shows Hall quantization robust upon applying very large current. Low longitudinal resistance is found up to 10 muA with finite width h/2e2 Hall plateau at 4.2 K and 16 T. The TiAu/Graphene contact resistance is found low, typically 20 Omega to 50 Omega. The results strongly indicate that Graphene is a promising new material for quantum metrology.
Keywords :
contact resistance; gold alloys; graphene; monolayers; quantum Hall effect; titanium alloys; Hall resistance plateaus; TiAu-C; TiAu-graphene contact resistance; graphene Hall bar preparation; high quality graphene samples; magnetic flux density 16 T; monolayer; quantization tests; quantum Hall effect; quantum metrology; resistance 20 ohm to 50 ohm; temperature 4.2 K; Contact resistance; Doping; Electrical resistance measurement; Electrons; Magnetic flux density; Quantization; Robustness; Temperature; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Precision Electromagnetic Measurements Digest, 2008. CPEM 2008. Conference on
Conference_Location :
Broomfield, CO
Print_ISBN :
978-1-4244-2399-6
Electronic_ISBN :
978-1-4244-2400-9
Type :
conf
DOI :
10.1109/CPEM.2008.4574629
Filename :
4574629
Link To Document :
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