Asymmetric double 2DEGs As a basis of quantum hall resistance standards

Author

Pierz, K. ; Hein, G. ; Schumacher, B. ; Pesel, E. ; Schumacher, H.W.

Author_Institution

Phys.-Tech. Bundesanstalt PTB, Braunschweig

fYear

2008

fDate

8-13 June 2008

Firstpage

18

Lastpage

19

Abstract

We study growth and magnetotransport properties of Ga(Al)As based asymmetric double two-dimensional electron gases (2DEG) consisting of a quantum well stacked on top of a heterojunction. We show that the electron densities of the two parallel 2DEG channels can be reliably matched by variation of a single growth parameter. Metrological quality of the resistance quantization of the two parallel quantum Hall channels at filling factor 2 is demonstrated.

Keywords

III-V semiconductors; electric resistance measurement; electron density; gallium arsenide; gallium compounds; galvanomagnetic effects; measurement standards; molecular beam epitaxial growth; quantum Hall effect; semiconductor growth; semiconductor quantum wells; two-dimensional electron gas; asymmetric double 2DEG; asymmetric double two-dimensional electron gases; electron densities; heterojunction; magnetotransport properties; quantum Hall resistance standards; quantum well; resistance quantization; Bars; Doping; Electrons; Filling; Gallium arsenide; Gases; Heterojunctions; Magnetic properties; Magnetosphere; Quantization;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements Digest, 2008. CPEM 2008. Conference on

Conference_Location

Broomfield, CO

Print_ISBN

978-1-4244-2399-6

Electronic_ISBN

978-1-4244-2400-9

Type

conf

DOI

10.1109/CPEM.2008.4574631

Filename

4574631