• DocumentCode
    2275651
  • Title

    Reproducibility of the quantum hall effect in GaAs/AlGaAs two dimensional electron gas

  • Author

    Schopfer, F. ; Poirier, W.

  • Author_Institution
    Lab. Nat. de Metrol. et d´´Essais, Trappes
  • fYear
    2008
  • fDate
    8-13 June 2008
  • Firstpage
    22
  • Lastpage
    23
  • Abstract
    This paper describes an experiment which shows that the integer quantum Hall effect implemented in GaAs/AIGaAs Hall bars mounted as a Wheatstone bridge is reproducible with a relative uncertainty of less than 4 parts in 1011.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; quantum Hall effect; semiconductor heterojunctions; two-dimensional electron gas; 2D electron gas; GaAs-AlGaAs; Hall bars; Wheatstone bridge; quantum hall effect; Bars; Bridge circuits; Electrons; Gallium arsenide; Hall effect; Physics; Reproducibility of results; SQUIDs; Uncertainty; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Precision Electromagnetic Measurements Digest, 2008. CPEM 2008. Conference on
  • Conference_Location
    Broomfield, CO
  • Print_ISBN
    978-1-4244-2399-6
  • Electronic_ISBN
    978-1-4244-2400-9
  • Type

    conf

  • DOI
    10.1109/CPEM.2008.4574633
  • Filename
    4574633
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2275651