• DocumentCode
    2275656
  • Title

    Dielectric characteristic of fatigued Bi4-xLaxTi3O12 ferroelectric films

  • Author

    Zhong, Ni ; Shoisaki, Tadashi

  • Author_Institution
    Nara Inst. of Sci. & Technol., Nara
  • fYear
    2007
  • fDate
    27-31 May 2007
  • Firstpage
    134
  • Lastpage
    135
  • Abstract
    Dielectric measurement was carried out on fatigued Bi4-xLaxTi3O12 ferroelectric films. It is found that the dielectric permittivity varies with switching cycles. With the increase of the switching cycles, the dielectric permittivity exhibits a continuous decrease. This decrease is pronounced for BiT films with low concentration of La, while it is slight for Bi4-xLaxTi3O12 films with high concentration of La. Dielectric permittivity was also measured on Bi4-xLaxTi3O12 ferroelectric films fatigue at different frequencies 50 kHz and 20 kHz. It exhibits that the decrease of dielectric permittivity is pronounced if the films were fatigued at low frequency, while this decrease is slight if the films were fatigue at high frequency. It is proposed that a growing of an interface layer appears during the fatigue process.
  • Keywords
    bismuth compounds; dielectric hysteresis; ferroelectric thin films; lanthanum compounds; permittivity; Bi3.2La0.8Ti3O12; dielectric characteristic; dielectric permittivity; fatigue; ferroelectric films; frequency 20 kHz; frequency 50 kHz; Bismuth; Dielectric measurements; Dielectric thin films; Fatigue; Ferroelectric films; Ferroelectric materials; Frequency; Materials science and technology; Permittivity; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
  • Conference_Location
    Nara
  • ISSN
    1099-4734
  • Print_ISBN
    978-1-4244-1334-8
  • Electronic_ISBN
    1099-4734
  • Type

    conf

  • DOI
    10.1109/ISAF.2007.4393192
  • Filename
    4393192