DocumentCode :
2275656
Title :
Dielectric characteristic of fatigued Bi4-xLaxTi3O12 ferroelectric films
Author :
Zhong, Ni ; Shoisaki, Tadashi
Author_Institution :
Nara Inst. of Sci. & Technol., Nara
fYear :
2007
fDate :
27-31 May 2007
Firstpage :
134
Lastpage :
135
Abstract :
Dielectric measurement was carried out on fatigued Bi4-xLaxTi3O12 ferroelectric films. It is found that the dielectric permittivity varies with switching cycles. With the increase of the switching cycles, the dielectric permittivity exhibits a continuous decrease. This decrease is pronounced for BiT films with low concentration of La, while it is slight for Bi4-xLaxTi3O12 films with high concentration of La. Dielectric permittivity was also measured on Bi4-xLaxTi3O12 ferroelectric films fatigue at different frequencies 50 kHz and 20 kHz. It exhibits that the decrease of dielectric permittivity is pronounced if the films were fatigued at low frequency, while this decrease is slight if the films were fatigue at high frequency. It is proposed that a growing of an interface layer appears during the fatigue process.
Keywords :
bismuth compounds; dielectric hysteresis; ferroelectric thin films; lanthanum compounds; permittivity; Bi3.2La0.8Ti3O12; dielectric characteristic; dielectric permittivity; fatigue; ferroelectric films; frequency 20 kHz; frequency 50 kHz; Bismuth; Dielectric measurements; Dielectric thin films; Fatigue; Ferroelectric films; Ferroelectric materials; Frequency; Materials science and technology; Permittivity; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
ISSN :
1099-4734
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
Type :
conf
DOI :
10.1109/ISAF.2007.4393192
Filename :
4393192
Link To Document :
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