Title :
Low Temperature Preparation of Bismuth-Related Ferroelectrics by Hydrothermal Synthesis
Author :
Inoue, Akihiro ; Nguyen, Tho Truong ; Noda, Minoru ; Okuyama, Masanori
Author_Institution :
Osaka Univ., Osaka
Abstract :
BIT powder is prepared by hydrothermal synthesis. It is found that the formation of BIT powder is affected by KOH concentration because the XRD intensity increases with increasing the KOH concentration less than 2.0 M. The products are yellowish gray and consist of microscopic lamellar platelets of 0.5 -1.5 mum. Treatment tempereatures are 160 -240 deg C and is decreased with increasing the holding time. The BIT thin films are prepared below 350 deg C by the sol-gel method and hydrothermal treatment for 3 h in Bi(OH)3 0.14 M and KOH 0.01 M mixture solution. The BIT thin film prepared under the optimized condition have hysteresis loops with a good squareness. When 5 V is applied to the BIT film, the polarization at zero electric field is 0.9 muC/cm2 and current density is 8.1x10-6 A/cm2.
Keywords :
X-ray diffraction; bismuth compounds; crystal growth from solution; current density; dielectric hysteresis; dielectric polarisation; ferroelectric thin films; powders; sol-gel processing; Bi4Ti3O12; XRD; current density; electric field; ferroelectric hysteresis loops; ferroelectric materials; ferroelectric polarization; ferroelectric thin films; hydrothermal synthesis; microscopic lamellar platelets; powders; sol-gel method; temperature 160 C to 240 C; time 3 h; voltage 5 V; Ferroelectric films; Ferroelectric materials; Integrated circuit technology; Nonvolatile memory; Powders; Random access memory; Sputtering; Temperature; Transistors; X-ray scattering;
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2007.4393193