• DocumentCode
    2275672
  • Title

    Low Temperature Preparation of Bismuth-Related Ferroelectrics by Hydrothermal Synthesis

  • Author

    Inoue, Akihiro ; Nguyen, Tho Truong ; Noda, Minoru ; Okuyama, Masanori

  • Author_Institution
    Osaka Univ., Osaka
  • fYear
    2007
  • fDate
    27-31 May 2007
  • Firstpage
    136
  • Lastpage
    137
  • Abstract
    BIT powder is prepared by hydrothermal synthesis. It is found that the formation of BIT powder is affected by KOH concentration because the XRD intensity increases with increasing the KOH concentration less than 2.0 M. The products are yellowish gray and consist of microscopic lamellar platelets of 0.5 -1.5 mum. Treatment tempereatures are 160 -240 deg C and is decreased with increasing the holding time. The BIT thin films are prepared below 350 deg C by the sol-gel method and hydrothermal treatment for 3 h in Bi(OH)3 0.14 M and KOH 0.01 M mixture solution. The BIT thin film prepared under the optimized condition have hysteresis loops with a good squareness. When 5 V is applied to the BIT film, the polarization at zero electric field is 0.9 muC/cm2 and current density is 8.1x10-6 A/cm2.
  • Keywords
    X-ray diffraction; bismuth compounds; crystal growth from solution; current density; dielectric hysteresis; dielectric polarisation; ferroelectric thin films; powders; sol-gel processing; Bi4Ti3O12; XRD; current density; electric field; ferroelectric hysteresis loops; ferroelectric materials; ferroelectric polarization; ferroelectric thin films; hydrothermal synthesis; microscopic lamellar platelets; powders; sol-gel method; temperature 160 C to 240 C; time 3 h; voltage 5 V; Ferroelectric films; Ferroelectric materials; Integrated circuit technology; Nonvolatile memory; Powders; Random access memory; Sputtering; Temperature; Transistors; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
  • Conference_Location
    Nara
  • ISSN
    1099-4734
  • Print_ISBN
    978-1-4244-1334-8
  • Electronic_ISBN
    1099-4734
  • Type

    conf

  • DOI
    10.1109/ISAF.2007.4393193
  • Filename
    4393193