Title :
New bridge snubber for suppressing reverse recovery effects of CoolMOS™
Author :
Guo, Ben ; Li, Siqi ; Jiang, Xiaohua ; Kanie, Tetsuo
Author_Institution :
Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
Abstract :
Severe reverse recovery effects of the intrinsic diode is a big problem in the application of CoolMOS™, resulting surge voltage and current, extra switching loss and electro magnetic interference (EMI). A new bridge snubber with energy recovery is presented in this paper for suppressing reverse recovery effects in CoolMOS™ inverters. It includes both turn-on and turn-off snubber cells and can return the absorbed energy to the load. It is verified through simulation and experiment that the proposed snubber can significantly reduce surge current during switching and raise the efficiency.
Keywords :
electromagnetic interference; interference suppression; invertors; losses; snubbers; surge protection; switching convertors; CoolMOS™ inverters; bridge snubber; electromagnetic interference; intrinsic diode; reverse recovery effect suppression; surge current; surge voltage; switching loss; turn-off snubber cells; turn-on snubber cells; Capacitors; Inverters; MOSFETs; Pulse width modulation; Snubbers; Surges; Switches;
Conference_Titel :
Electrical Machines and Systems (ICEMS), 2011 International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4577-1044-5
DOI :
10.1109/ICEMS.2011.6073554
