Crystalline Structure and Surface Morphology of the AlN films sputtered on 64Â°-YX LiNbO3

Author

Chang, Feng-Chih ; Wu, Sean ; Lee, Maw-Shung ; Yu, Jian-Shuo ; Chang, Chia-Hsiung ; Huang, Cheng-Liang

Author_Institution

Nat. Cheng Kung Univ., Tainan

fYear

2007

fDate

27-31 May 2007

Firstpage

146

Lastpage

148

Abstract

Highly (002) oriented aluminum nitride (AlN) films were successfully prepared on a 64deg-YX LiNbO₃ substrate by r.f. magnetron sputtering. The crystalline structure of the films was determined by grazing incident angle X-ray diffraction (XRD) and the surface microstructure of films was investigated by Scanning electron microscope (SEM). The atom composition ratio (Al/N) of the films was also determined by Energy Dispersive X-ray Spectroscopy (EDS). The results showed the optimal (002) oriented AlN films were prepared at 200 C and 5 m Torr. The atom composition ratio (Al/N) was 0.96 (near 1).

Keywords

III-V semiconductors; X-ray chemical analysis; X-ray diffraction; aluminium compounds; scanning electron microscopy; semiconductor thin films; sputter deposition; surface morphology; wide band gap semiconductors; AlN; EDS; LiNbO₃; LiNbO₃ substrate; SEM; XRD; atom composition ratio; crystalline structure; energy dispersive X-ray spectroscopy; grazing incident angle X-ray diffraction; highly (002) oriented aluminum nitride films; pressure 5 mtorr; r.f. magnetron sputtering; scanning electron microscopy; surface microstructure; surface morphology; temperature 200 degC; Aluminum nitride; Crystal microstructure; Crystallization; Dispersion; Scanning electron microscopy; Spectroscopy; Sputtering; Surface morphology; X-ray diffraction; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on

Conference_Location

Nara

ISSN

1099-4734

Print_ISBN

978-1-4244-1334-8

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2007.4393196

Filename

4393196