Title :
Structual and Dielectric Properties of Pb(Zr0.53Ti0.47)O3 Thin Films Grown on LaNiO3 Buffered Si Substrates
Author :
Yang, Xiaoyan ; Cheng, Jinrong ; Chen, Feng ; Meng, Zhongyan
Author_Institution :
Shanghai Univ., Shanghai
Abstract :
Ferroelectric Pb(Zr0.53Ti0.47)O3 thin films with thickness of around 800 nm were prepared on LaNiO3 (LNO) buffered SiO2/Si substrates by sol-gel method. The LNO buffer layer serves as the bottom electrode and the template for growing PZT thin films with preferred orientation. The (110)-textured PZT thin films can be obtained on 250 nm-thick LNO buffered SiO2/Si substrates. Upon using the LNO buffer layer, the annealing temperature of the PZT films is lowered to 600degC. Our results indicate that PZT thin films prepared on LNO buffered Si substrates have good structural and dielectric properties for sensor and actuator applications.
Keywords :
annealing; buffer layers; ferroelectric thin films; lanthanum compounds; lead compounds; permittivity; silicon; silicon compounds; sol-gel processing; (110)-texture; LaNiO3-SiO2-Si; PZT-LaNiO3-SiO2-Si; actuator; annealing; bottom electrode; buffer layer; dielectric constant; dielectric properties; ferroelectric thin films; preferred orientation; sensor; size 250 nm; sol-gel method; structual properties; temperature 600 C; Annealing; Buffer layers; Dielectric substrates; Dielectric thin films; Electrodes; Ferroelectric materials; Semiconductor thin films; Temperature sensors; Thin film sensors; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location :
Nara
Print_ISBN :
978-1-4244-1334-8
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2007.4393208
