Integrated VCO and PA based on 0.25 μm RF/CMOS technology

Author

Kuo, Chin-Wei ; Hsiao, Chao-Chih ; Chan, Yi-Jen

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Chung-li, Taiwan

Volume

3

fYear

2001

fDate

2001

Firstpage

1279

Abstract

CMOS technology has been widely used in modern microwave integrated circuit design. A power amplifier and a voltage controlled oscillator for a 2.4 GHz application have been demonstrated by using 0.25 μm CMOS 1P5M technology. The VCO achieved a frequency tuning range from 2.1 GHz to 2.9 GHz, and the phase noise is -94 dBc/Hz at a 100 KHz offset. The amplifier provided a maximum output power of 16 dBm and a maximum PAE of 27%

Keywords

CMOS analogue integrated circuits; MMIC oscillators; MMIC power amplifiers; UHF oscillators; UHF power amplifiers; field effect MMIC; integrated circuit design; integrated circuit noise; phase noise; voltage-controlled oscillators; 0.25 micron; 2.1 to 2.9 GHz; 2.4 GHz; 27 percent; CMOS 1P5M technology; RF/CMOS technology; frequency tuning range; integrated VCO; maximum PAE; maximum output power; phase noise; power amplifier; CMOS technology; Circuit optimization; Integrated circuit synthesis; Integrated circuit technology; Microwave technology; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Tuning; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific

Conference_Location

Taipei

Print_ISBN

0-7803-7138-0

Type

conf

DOI

10.1109/APMC.2001.985368

Filename

985368