Title :
2.4 V-operated enhancement mode PHEMT with 32 dBm output power and 61% power efficiency
Author :
Chen, S.H. ; Chang, E.Y. ; Lin, Y.C.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
2.4 V operated enhancement-mode pseudormorphic high electron mobility transistors (E-PHEMTs) with high output power and power-added-efficiency (PAE) have been developed. With optimally designed epitaxial structure and gate recess process, the E-PHEMT shows high power performance and high power gain. Under 2.4 V bias at 1.9 GHz, the E-PHEMT shows maximum output power of 32.25 dBm and maximum power-added efficiency of 61.45% with linear power gain of 13.93 dB when the device was tuned for maximum output power match. When tuned for maximum output power added efficiency, the E-PHEMT can achieve a maximum PAE of 78.51%. The developed E-PHEMT with superior power performance is one of the candidates for power amplifiers used for 2.4 V-operated 3G wireless communication system
Keywords :
UHF field effect transistors; low-power electronics; power HEMT; 1.9 GHz; 13.93 dB; 2.4 V; 3G wireless communication system; 61 percent; enhancement mode PHEMT; gate recess process; linear power gain; maximum output power match; optimally designed epitaxial structure; output power; power efficiency; Gallium arsenide; Gold; HEMTs; Intrusion detection; Low voltage; MODFETs; PHEMTs; Power amplifiers; Power generation; Wireless communication;
Conference_Titel :
Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific
Conference_Location :
Taipei
Print_ISBN :
0-7803-7138-0
DOI :
10.1109/APMC.2001.985371
