DocumentCode :
2276173
Title :
Scatterometry measurement for SiGe AEI sigma-shaped gate structures of 28nm technology
Author :
Wang, Yu-Wen ; Yeh, Autumn ; Lin, Pao-Chung ; Chien, Chin-Cheng ; Lin, Ching-Hung Bert ; Xu, Zhi-Qing James ; Cheng, Chao-Yu Harvey ; Yoo, Sungchul ; Lin, Jason ; Mihardja, Lanny ; Perry-Sullivan, Catherine
Author_Institution :
United Microelectron. Corp., Tainan, Taiwan
fYear :
2012
fDate :
15-17 May 2012
Firstpage :
110
Lastpage :
114
Abstract :
Novel process control methodologies are required for SiGe gate recess structures that are used in IC manufacturing to enhance device performance. Metrology measurements of 28nm SiGe after-etch inspection U-sigma shaped and V-sigma shaped gate structures must be able to track subtle variations for several critical parameters, including SiGe-to-gate width, tip-to-gate width, sigma depth and recess depth. For production process control of these structures, a metrology tool must utilize a nondestructive measurement technique, and have high sensitivity, precision and throughput. This paper explores the capabilities of a new-generation scatterometry critical dimension (SCD) metrology tool to measure critical parameters and serve as a production process monitor for 28nm and beyond complex gate structures.
Keywords :
integrated circuit manufacture; measurement; production control; silicon compounds; IC manufacturing; SiGe AEI sigma-shaped gate structures; SiGe gate recess structures; U-sigma shaped gate structure; V-sigma shaped gate structure; nondestructive measurement technique; production process control; scatterometry critical dimension metrology; scatterometry measurement; size 28 nm; Correlation; Logic gates; Metrology; Process control; Radar measurements; Shape measurement; Silicon germanium; SiGe gate recess; critical dimension; metrology; scatterometry;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2012 23rd Annual SEMI
Conference_Location :
Saratoga Springs, NY
ISSN :
1078-8743
Print_ISBN :
978-1-4673-0350-7
Type :
conf
DOI :
10.1109/ASMC.2012.6212879
Filename :
6212879
Link To Document :
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