In-plane Dielectric Characterization of Epitaxial Ba(Zr0.35Ti0.65)O3 Thin Films Grown on LSAT (001)

Author

Yun, P. ; Wang, D.Y. ; Wang, Y. ; Chan, H.L.W.

Author_Institution

Hong Kong Polytech. Univ., Hong Kong

fYear

2007

fDate

27-31 May 2007

Firstpage

222

Lastpage

225

Abstract

Ba(Zr_0.35Ti_0.65)O₃ (BZT) thin film was deposited on (LaAlO₃)O₃(Sr₂AlTaO₆)_0.35 [LSAT] (001) single crystal substrate using pulsed laser deposition. The X-ray diffraction pattern reveals an epitaxial growth of the film with a pure perovskite phase. The in-plane dielectric properties of the Ba(Zr_0.35Ti_0.65)O₃ thin film was characterized as a function of frequency (1 kHz -1 GHz), temperature (-130degC-100degC) and dc electric field (0-13.3 V/mum) using gold interdigital electrodes. The relative permittivity of the film exhibits strong dependence of the dc bias field over the whole frequency range. The relative permittivity has a high tunability of 60% -31.2% at room temperature in the frequency range of 1 kHz to 1 GHz, showing the potential of our Ba(Zr_0.35Ti_0.65)O₃ thin film to be used in microwave devices.

Keywords

X-ray diffraction; aluminium compounds; barium compounds; dielectric thin films; epitaxial layers; ferroelectric Curie temperature; ferroelectric transitions; lanthanum compounds; microwave devices; permittivity; pulsed laser deposition; strontium compounds; titanium compounds; zirconium compounds; BaZr_0.35Ti_0.65O₃; Curie temperature; LaAlO₃O₃Sr₂AlTaO₆; X-ray diffraction; epitaxial growth; frequency 1 kHz to 1 GHz; in-plane dielectric properties; microwave devices; phase transition; pulsed laser deposition; relative permittivity; temperature -130 C to 100 C; temperature 293 K to 298 K; thin film; Dielectric substrates; Dielectric thin films; Frequency; Optical pulses; Permittivity; Pulsed laser deposition; Sputtering; Strontium; X-ray diffraction; X-ray lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on

Conference_Location

Nara

ISSN

1099-4734

Print_ISBN

978-1-4244-1334-8

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2007.4393221

Filename

4393221