Longitudinal Displacement Measurement of Lead Zirconate Titanate Thick Films Deposited on Silicon substrates

Author

Iijima, Toru ; Okino, H. ; Yamamoto, T.

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba

fYear

2007

fDate

27-31 May 2007

Firstpage

228

Lastpage

230

Abstract

10-mum-thick PZT films were deposited on the Pt/Ti/SiO₂/Si substrates, and 20-to 500-mum-diameter PZT thick film disks on the Si substrate were fabricated. the butterfly shape displacement curves of the top side, bottom side and subtraction of bottom side from top side were measured with twin-beam interferometer, and the effect of the disk diameter on these displacements were compared with FEM simulation. the clamping effect is eliminated when the ratio of the PZT disk diameter, d, to the PZT film thickness, t, is less than three, that is dlt < 3, for 10-mum-thick PZT film. therefore, the actual longitudinal displacement of the PZT films can be evaluated for dlt < 3.

Keywords

lead compounds; liquid phase deposition; piezoelectric thin films; FEM simulation; PZT; PZT films; Pt-Ti-SiO₂-Si; chemical solution deposition process; clamping effect; lead zirconate titanate thick films; piezoelectric film; silicon substrates; size 10 mum; size 20 mum to 500 mum; twin-beam interferometer; Atomic force microscopy; Clamps; Displacement measurement; Piezoelectric films; Semiconductor films; Shape measurement; Silicon; Substrates; Thick films; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on

Conference_Location

Nara

ISSN

1099-4734

Print_ISBN

978-1-4244-1334-8

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2007.4393223

Filename

4393223