• DocumentCode
    2276345
  • Title

    Preparation and performance of a low relative permittivity insulation paper

  • Author

    Liu, Tuan ; Liao, Ruijin ; Zhang, Fuzhou ; Yang, Lijun

  • Author_Institution
    Coll. of Electr. Eng., Chongqing Univ., Chongqing, China
  • fYear
    2012
  • fDate
    17-20 Sept. 2012
  • Firstpage
    211
  • Lastpage
    214
  • Abstract
    SiO2 hollow spheres and K-SiO2 insulation paper handsheets composed of these SiO2 hollow spheres with different weight percentages were synthesized. SiO2 hollow spheres with a low content were uniformly dispersed. However, the SiO2 hollow spheres locally aggregated with increased concentration. The relative permittivities of the immersed oil K-SiO2 handsheets initially decreased and then increased with increased SiO2 hollow sphere content. K-5% SiO2 had the lowest relative permittivity. Simulation analysis indicated that the electric field distribution between the two test electrodes was uniform. The breakdown voltage of the paper-oil-paper composite insulation system increased with decreased relative permittivity of the paper. The breakdown voltage of the composite insulation system increased from 26.4 kV to 30.5 kV when the relative permittivity of the paper decreased from 2.55 to 1.68. The experimental results were also consistent with the theoretically calculated data. And in the paper-oil-paper composite insulation system, the electric field strength of the oil gap decreased with decreased relative permittivity of the paper.
  • Keywords
    electric fields; electrodes; insulating oils; paper; permittivity; potassium; silicon compounds; K-SiO2; breakdown voltage; electric field distribution; electric field strength; hollow spheres; insulation paper handsheets; oil gap; paper-oil-paper composite insulation; relative permittivity; test electrodes; Dielectrics; Electric fields; Electrodes; Insulation; Permittivity; Polyimides;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Voltage Engineering and Application (ICHVE), 2012 International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4673-4747-1
  • Type

    conf

  • DOI
    10.1109/ICHVE.2012.6357023
  • Filename
    6357023