Title :
Calibration and matching of floating gate devices
Author :
Millard, Wesley P. ; Kalyjian, Z.K. ; Andreou, Andreas G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA
Abstract :
We measure the matching characteristics of floating gate MOSFET devices. Arrays of ten FG PFET devices were fabricated on two different runs of the same process. Matching characteristics were measured: (1) direct from the foundry, (2) after Fowler-Nordheim tunneling, (3) after self-limiting PFET hot-electron injection, and (4) after UV exposure. We also found significant threshold voltage drift in long-term memory tests
Keywords :
CMOS analogue integrated circuits; MOSFET; analogue storage; hot carriers; tunnelling; FG PFET devices; Fowler-Nordheim tunneling; UV exposure; floating gate MOSFET devices; long-term memory tests; matching characteristics; self-limiting PFET hot-electron injection; threshold voltage drift; CMOS technology; Calibration; Circuit testing; Intrusion detection; Nonvolatile memory; Power supplies; Secondary generated hot electron injection; Threshold voltage; Tunneling; Voltage control;
Conference_Titel :
Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on
Conference_Location :
Geneva
Print_ISBN :
0-7803-5482-6
DOI :
10.1109/ISCAS.2000.858770
