DocumentCode
2276591
Title
Calibration and matching of floating gate devices
Author
Millard, Wesley P. ; Kalyjian, Z.K. ; Andreou, Andreas G.
Author_Institution
Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA
Volume
4
fYear
2000
fDate
2000
Firstpage
389
Abstract
We measure the matching characteristics of floating gate MOSFET devices. Arrays of ten FG PFET devices were fabricated on two different runs of the same process. Matching characteristics were measured: (1) direct from the foundry, (2) after Fowler-Nordheim tunneling, (3) after self-limiting PFET hot-electron injection, and (4) after UV exposure. We also found significant threshold voltage drift in long-term memory tests
Keywords
CMOS analogue integrated circuits; MOSFET; analogue storage; hot carriers; tunnelling; FG PFET devices; Fowler-Nordheim tunneling; UV exposure; floating gate MOSFET devices; long-term memory tests; matching characteristics; self-limiting PFET hot-electron injection; threshold voltage drift; CMOS technology; Calibration; Circuit testing; Intrusion detection; Nonvolatile memory; Power supplies; Secondary generated hot electron injection; Threshold voltage; Tunneling; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on
Conference_Location
Geneva
Print_ISBN
0-7803-5482-6
Type
conf
DOI
10.1109/ISCAS.2000.858770
Filename
858770
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