Influences of etcher chamber condition on critical-dimension shifts in advanced floating gate etching process

Author

Chang, Sheng-Yuan ; Chen, Yu-Chung ; Wei, An Chyi ; Lee, Hong-Ji ; Lian, Nan-Tzu ; Yang, Tahone ; Chen, Kuang-Chao ; Lu, Chih-Yuan

Author_Institution

Technol. Dev. Center, Macronix Int. Co., Ltd., Hsinchu, Taiwan

fYear

2012

fDate

15-17 May 2012

Firstpage

151

Lastpage

154

Abstract

The authors investigated the correlation between variation of post-etch critical dimension (ECD) and etcher chamber condition during floating gate etching process. This paper presents the significantly effective method of utilizing the SF₆/O₂-based very long plasma-chamber cleaning or the novel Transformer coupled plasma (TCP) window temperature design not only achieves a stable gate CD (CD variation <; 2nm) but also simplifies etching process.

Keywords

etching; plasma deposition; sulphur compounds; ECD; SF₆-O₂; TCP window temperature design; advanced floating gate etching process; critical-dimension shift; etcher chamber condition; plasma-chamber cleaning; post-etch critical dimension; transformer coupled plasma; Cleaning; Etching; Logic gates; Nonvolatile memory; Plasma temperature; Polymers; Critical dimension (CD); Etcher chamber condition; Transformer coupled plasma (TCP); Tri-layer approach;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference (ASMC), 2012 23rd Annual SEMI

Conference_Location

Saratoga Springs, NY

ISSN

1078-8743

Print_ISBN

978-1-4673-0350-7

Type

conf

DOI

10.1109/ASMC.2012.6212899

Filename

6212899