Advanced metrology and gas purifier yield improvement

Author

Srivastava, Abneesh

Author_Institution

Gas Microcontamination Control, Entegris, Inc., San Diego, CA, USA

fYear

2012

fDate

15-17 May 2012

Firstpage

161

Lastpage

164

Abstract

Advanced spectrometric and spectroscopic metrology techniques for moisture measurement are employed to characterize inert (nitrogen, noble) and hydrogen gas purifier performance. Material properties relevant to efficient contaminant adsorption on regenerable media are systematically probed to achieve a marked improvement in purifier moisture removal capacity and efficiency. Gains in moisture dry down, upset recovery time, purity stability and low pressure purity are made to facilitate semiconductor processes targeting high device yield.

Keywords

contamination; hydrogen; mass spectrometers; moisture measurement; semiconductor device measurement; spectroscopy; advanced spectrometric techniques; atmospheric pressure ionization mass spectrometer; contaminant adsorption; hydrogen gas purifier yield improvement; low pressure purity; material property; moisture dry down; moisture measurement; purifier moisture removal capacity; purity stability; regenerable media; semiconductor device fabrication process; spectroscopic metrology techniques; upset recovery time; Atmospheric measurements; Manifolds; Media; Metrology; Moisture; Purification; Ultraviolet sources; purifier stability; removal efficiency; sub-atmospheric;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference (ASMC), 2012 23rd Annual SEMI

Conference_Location

Saratoga Springs, NY

ISSN

1078-8743

Print_ISBN

978-1-4673-0350-7

Type

conf

DOI

10.1109/ASMC.2012.6212902

Filename

6212902