• DocumentCode
    2276722
  • Title

    Analysis of an effect of perturbations in SWHM and illuminating optical scheme parameters on an aerial image

  • Author

    Borisov, M.V. ; Chelyubeev, D.A. ; Chernik, V.V. ; Gavrikov, A.A. ; Knyazkov, D.Y. ; Mikheev, P.A. ; Rakhovskiy, V.I. ; Shamaev, A.S.

  • Author_Institution
    NANOTECH SWHL, Moscow, Russia
  • fYear
    2012
  • fDate
    15-17 May 2012
  • Firstpage
    165
  • Lastpage
    169
  • Abstract
    There is considered a new method of sub-wavelength holographic lithography (SWHL) for creation of IC layers aerial images. This approach proposes to use very local defects tolerable holographic patterns and simple optical scheme for photoresist exposure. The paper investigates influence of different perturbations occurring during either mask manufacturing or photoresist exposing on resulting topology image. Simulation showed that practically all perturbations which appear when using modern equipment do not significantly distort the resulting image, while the most problematic phase noise effects could be removed by introducing them into sub-wavelength holographic mask (SWHM) calculation.
  • Keywords
    holography; lithography; masks; perturbation techniques; IC layers aerial images; SWHM; holographic patterns; mask manufacturing; perturbations; photoresist exposure; subwavelength holographic lithography; Adaptive optics; Image quality; Image reconstruction; Integrated optics; Optical distortion; Optical imaging; Topology; imaging; sub-wavelength holographic lithography; sub-wavelength holographic mask;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference (ASMC), 2012 23rd Annual SEMI
  • Conference_Location
    Saratoga Springs, NY
  • ISSN
    1078-8743
  • Print_ISBN
    978-1-4673-0350-7
  • Type

    conf

  • DOI
    10.1109/ASMC.2012.6212903
  • Filename
    6212903