Title :
Spectroscopic evaluation of rare earth doped GaN for full-color display applications
Author :
Nyein, E.E. ; Hommerich, U. ; Heikenfeld, J. ; Lee, D.S. ; Steckl, A.J. ; Zavada, J.M.
Author_Institution :
Dept. of Phys., Hampton Univ., VA, USA
Abstract :
Summary form only given. We are currently engaged in a spectroscopic evaluation of Er doped GaN and Eu doped GaN as phosphor materials. The investigated samples were grown by solid-source molecular beam epitaxy on Si [111] substrates. An overview of the room-temperature emission spectra from both samples is shown.
Keywords :
III-V semiconductors; erbium; europium; gallium compounds; molecular beam epitaxial growth; phosphors; photoluminescence; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; 20 C; Er doped GaN; Eu doped GaN; GaN:Er; GaN:Eu; Si; Si [111] substrate; full-color display applications; overview; phosphor material; rare earth doped GaN; room-temperature emission spectra; solid-source molecular beam epitaxy; spectroscopic evaluation; Displays; Erbium; Etching; Gallium nitride; Optical fiber communication; Optical materials; Physics; Semiconductor materials; Spectroscopy; Temperature distribution;
Conference_Titel :
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-706-7
DOI :
10.1109/CLEO.2002.1034441
