Optical characterization and device fabrication of laterally patterned InGaN blue light emitting media on 50 nm scale

Author

Chen, Luo-nan ; Yin, Aijun ; Im, J.S. ; Nurmikko, A.V. ; Xu, Jimmy M. ; Han, Jinguang

Author_Institution

Dept. of Phys., Brown Univ., Providence, RI, USA

fYear

2002

fDate

24-24 May 2002

Firstpage

654

Abstract

Summary form only given. We describe a two-fold approach to produce an arrayed pattern of InGaN/GaN MQW heterostructures by electron beam lithography and by pattern transfer from self-organized porous alumina. Spontaneous emission and light extraction of such subwavelength scale structures have been studied and a pn-junction structure has been fabricated for current injection into the arrays of isolated nanoscale posts.

Keywords

III-V semiconductors; arrays; charge injection; electron beam lithography; gallium compounds; indium compounds; light emitting diodes; nanoelectronics; photoluminescence; semiconductor quantum wells; semiconductor superlattices; spontaneous emission; wide band gap semiconductors; 50 nm; Al/sub 2/O/sub 3/; InGaN-GaN; InGaN/GaN MQW heterostructures; arrayed pattern; current injection; device fabrication; electron beam lithography; isolated nanoscale posts; laterally patterned InGaN blue light emitting media; light extraction; optical characterization; pattern transfer; photoluminescence; pn-junction; self-organized porous alumina; spontaneous emission; two-fold approach; Electron beams; Electron optics; Gallium nitride; Lithography; Optical arrays; Optical device fabrication; Optical devices; Quantum well devices; Spontaneous emission; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-706-7

Type

conf

DOI

10.1109/CLEO.2002.1034442

Filename

1034442