Title :
Formation of quasi-regular quantum dots with post-growth thermal annealing and their optical characteristics in InGaN/GaN quantum wells
Author :
Yen-Sheng Lin ; Kung-Jeng Ma ; Cheng Hsu ; Yi-Yin Chung ; Chih-Wen Liu ; Shih-Wei Feng ; Yung-Chen Cheng ; Yang, C.C. ; Hui-Wen Chuang ; Cheng-Ta Kuo ; Jian-Shihn Tsang ; Weirich, T.E.
Author_Institution :
Dept. of Mech. Eng., Chung Cheng Inst. of Technol., Taoyuan, Taiwan
Abstract :
Summary form only given. In this paper, we report the formation of quasiregular QDs from randomly distributed indium aggregated clusters after post-growth thermal annealing (PGTA) of an InGaN/GaN QW sample. The optical measurements showed quite consistent trends of blue shift and spectral width variation.
Keywords :
III-V semiconductors; annealing; gallium compounds; indium compounds; semiconductor quantum dots; semiconductor quantum wells; spectral line breadth; spectral line shift; wide band gap semiconductors; InGaN-GaN; InGaN/GaN QW sample; InGaN/GaN quantum wells; blue shift; optical characteristics; post-growth thermal annealing; quasi-regular quantum dots; quasiregular QDs; randomly distributed indium aggregated clusters; spectral width; Annealing; Electrons; Fluctuations; Gallium nitride; Indium; Quantum dots; Quantum mechanics; Temperature; Thermal engineering; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-706-7
DOI :
10.1109/CLEO.2002.1034444
